DRAM fund gains driven by 75% allocation to Micron, SK hynix, and Samsung amid tight high-bandwidth memory supply.
The Roundhill Memory ETF (DRAM) jumped 128% in 40 trading days, closing at $63.20 on May 29, up from its April 2 debut at $27.76. A $10,000 investment at launch would now be worth $22,800, with no distributions paid yet.
The surge was fueled by a 75% allocation to Micron (MU), SK hynix (005930.KS), and Samsung Electronics (005930.KS), which benefited from soaring high-bandwidth memory (HBM) demand. Taiwan’s memory manufacturing revenue rose 152.4% year-over-year in Q1 2026, with full-year growth projected at 111.9%.
Gains depend on sustained HBM pricing, stable conventional DRAM prices, and limited currency headwinds from the Korean won and Taiwan dollar. The fund’s concentration in three stocks amplifies both upside and risk.