The five-year deal targets next-generation AI infrastructure with joint memory, foundry, and advanced packaging projects.
Samsung Electronics and Broadcom signed a memorandum of understanding to expand collaboration on AI semiconductor technologies, with planned investments exceeding $200bn by 2030. The partnership focuses on high bandwidth memory for AI accelerators and foundry operations using Samsung’s 2nm process and below.
The agreement follows rising demand for integrated semiconductor solutions in AI infrastructure. Samsung’s co-CEO highlighted the need for tighter memory-logic integration to support future AI applications. Prior collaborations included limited foundry and memory supply deals, but this MOU broadens the scope significantly.
Executives from both firms and South Korean government representatives attended the announcement at the AI Summit in San Francisco. The deal may also explore advanced packaging techniques like 2.3D and 2.5D integration to enhance performance.